BE Epitaxy Semiconductor Technology
Intern, Simulation and Layout Team · Hsinchu, Taiwan
- Lead MZM RF simulation for a 1.6 Tb/s silicon-photonics project, developing HFSS traveling-wave electrode models and extracting frequency-dependent distributed RLGC and propagation parameters.
- Combine HFSS-derived RLGC with p–n junction R/C from colleagues’ CHARGE simulations to model loaded electrodes, extract characteristic impedance and RF attenuation, and quantify velocity mismatch against optical group-index data.
- Developed a Python two-line transfer-matrix workflow that predicts full-length S-parameters from two short HFSS models while preserving fixed launch and terminal effects. Validated the 3 mm prediction against direct HFSS simulation over 1–60 GHz: 0.35 dB S21-magnitude RMSE and 3.42° relative S21-phase RMSE, with simulation time reduced from about 48 hours to 1.5 hours (32×).